CJP05N60
CJP05N60 is N-Channel MOSFET manufactured by JCET.
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220-3L Plastic-Encapsulate MOSFETS
CJP05N60 N-Channel Power MOSFET
Description This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time.
Designed for high voltage, high speed switching applications such as power suplies, converters, power motor controls and bridge circuits.
Features z Low RDS(on) z Lower Capacitances z Lower Total Gate Charge z Tighter VSD Specifications z Avalanche Energy Specified
2.Drain
TO-220-3L
1. GATE 2. DRAIN 3. SOURCE
1.Gate
3.Source
Maximum ratings (Ta=25℃ unless otherwise noted)
Drain-Source Voltage
Parameter
Gate-Source Voltage Continuous Drain Current Single Pulsed Avalanche Energy (note1) Power Dissipation (note2,Ta=25℃) Maximum Power Dissipation (note3,Tc=25℃) Thermal Resistance from Junction to Ambient Junction Temperature Storage...
