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CJU40P04 - P-Channel Power MOSFET

General Description

provide excellent RDS(ON) with low gate charge.

1.

GATE 2.

Key Features

  • z High density cell design for ultra low RDS(ON) z Fully characterized Avalanche voltage and current z Good stability and uniformity with high EAS.

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Datasheet Details

Part number CJU40P04
Manufacturer JCET
File Size 823.85 KB
Description P-Channel Power MOSFET
Datasheet download datasheet CJU40P04 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate MOSFETS CJU40P04 P-Channel Power MOSFET V(BR)DSS -40V RDS(on)MAX   14mΩ@-10V ID -40A TO-252-2L   DESCRIPTION The CJU40P04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is well 1. GATE 2. DRAIN 3. SOURCE suited for high current load applications.