Datasheet Summary
IRGS4615DPbF IRGB4615DPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
VCES = 600V IC = 15A, TC = 100°C tsc > 5µs, Tjmax = 175°C
VCE(on) typ. = 1.55V @ 8A n-channel
D2-Pak IRGS4615DPbF
TO-220AB IRGB4615DPbF
Applications
- Appliance Drives
- Inverters
- UPS
Features
Low VCE(ON) and switching losses Square RBSOA and maximum junction temperature 175°C Positive VCE(ON) temperature coefficient and tighter distribution of parameters 5μs short circuit SOA Lead-free, RoHS pliant
Gate
Collector
Em itter
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Benefits High efficiency in a wide range of applications and switching frequencies Improved reliability due to rugged hard...