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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-126 Plastic-Encapsulate Transistors
BD234/236/238 TRANSISTOR (PNP)
FEATURES
Power Dissipation
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value Unit
VCBO VCEO VEBO IC
Collector-Base Voltage BD234
BD236
BD238
Collector-Emitter Voltage BD234
BD236
BD238
Emitter-Base Voltage
BD234
BD236
BD238
Collector Current –Continuous
-45 -60 -100 -45 -60 -80
-5
-2
V V V A
PC Collector Power Dissipation
1.25 W
TJ Junction Temperature Tstg Storage Temperature
150 -55-150
℃ ℃
TO-126
1. EMITTER 2. COLLECTOR 3.