* VDS=650V, ID=11A RDS(ON) <0.42Ω @ VGS =10V
* Multi-Epi process SJ-MOSFET
* Smart design in high voltage technology
* Ultra lower on-resistance
* Fas.
JMC Super Junction N-channel MOSFET
Features
* VDS=650V, ID=11A RDS(ON) <0.42Ω @ VGS =10V
* Multi-Epi process SJ-MOSFET
* Smart design in high voltage technology
* Ultra lower on-resistance
* Fast switching
* Ultra low gate .
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