* 100V,7A RDS(ON)< 140mΩ @ VGS =10V RDS(ON)< 300mΩ @ VGS =4.5V
* Advanced Split Gate Trench Technology
* Excellent RDS(ON) and Low Gate Charge
* Lead free.

JMG N-channel Enhancement Mode Power MOSFET Features
* 100V,7A RDS(ON)< 140mΩ @ VGS =10V RDS(ON)< 300mΩ @ VGS =4.5V
* Advanced Split Gate Trench Technology
* Excellent RDS(ON) and Low Gate Charge
* Lead free product is acquired App.

JMGK20V15A

JM-M1088BHG

JM11401

JM11402

JM11403

JM11404

JM11405

JM11406

JM13501

JM13502

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