• Part: JCS19N20
  • Manufacturer: JILIN SINO-MICROELECTRONICS
  • Size: 1.66 MB
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JCS19N20 Key Features

  • Low gate charge -Low Crss (typical 48pF ) -Fast switching -100% avalanche tested -Improved dv/dt capability -RoHS produc
  • 55～+150
  • 漏极电流由最高结温限制
  • Drain current limited by maximum junction temperature
  • VDS=0V, VGS =30V
  • 100 nA
  • 100 nA
  • 0.15 0.18 Ω
  • 1330 1760 pF
  • 181 245 pF

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JCS19N20 Description

R JCS19N20 主要参数 MAIN CHARACTERISTICS ID VDSS Rdson（@Vgs=10V） Qg 18.0A 200 V 0.18Ω 47nC 封装 Package N 沟道增强型场效应晶体管 N- CHANNEL MOSFET 用途 高频开关电源 电子镇流器 UPS 电源 APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts based on half bridge UPS 产品特性 低栅极电荷 低 Crss (典型值 48pF) 开关速度快 产品全部经过雪崩测试 高抗 dv/dt 能力 RoHS.