JCS1HN60TC Overview
N 沟道增强型场效应晶体管 R N-CHANNEL MOSFET JCS1HN60C 主要参数 MAIN CHARACTERISTICS ID 0.5 A VDSS 600 V Rdson(@Vgs=10V) 15 Ω Qg 3.6 nC TO-92 封装 Package 用途 z 高频开关电源 z 电子镇流器 APPLICATIONS z High efficiency switch mode power supplies z Electronic lamp ballasts based on half bridge 产品特性 z低栅极电荷 z低 Crss (典型值 2.8pF) z开关速度快 z产品全部经过雪崩测试 z高抗 dv/dt 能力 zRoHS.
JCS1HN60TC Key Features
- 55~+150
- VDS=480V, TC=125℃
- 100 μA
- 100 nA
- 100 nA
- 12 15 Ω
- 200 220 pF
- 19 23 pF
- 2.8 4.0 pF
- 9 20 ns