• Part: JCS630
  • Manufacturer: JILIN SINO-MICROELECTRONICS
  • Size: 2.02 MB
Download JCS630 Datasheet PDF
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JCS630 Description

R JCS630 主要参数 MAIN CHARACTERISTICS ID VDSS Rdson(@Vgs=10V) Qg 9.0A 200 V 0.4Ω 22nC 封装 Package N 沟道增强型场效应晶体管 N- CHANNEL MOSFET 用途 高频开关电源 电子镇流器 UPS 电源 APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts based on half bridge UPS 产品特性 低栅极电荷 低 Crss (典型值 22pF) 开关速度快 产品全部经过雪崩测试 高抗 dv/dt 能力 RoHS.

JCS630 Key Features

  • Low gate charge -Low Crss (typical 22pF ) -Fast switching -100% avalanche tested -Improved dv/dt capability -RoHS produc
  • 55~+150
  • 漏极电流由最高结温限制
  • Drain current limited by maximum junction temperature
  • VDS=0V, VGS =30V
  • 100 nA
  • 100 nA
  • 0.34 0.4 Ω
  • 550 720 pF
  • 85 110 pF