JCS630BA Datasheet | JILIN SINO-MICROELECTRONICS

N 沟道增强型场效应晶体管 R N-CHANNEL MOSFET JCS630A 主要参数 MAIN CHARACTERISTICS 封装 Package ID 9.0 A VDSS 200 V Rdson（Vgs=10V） 0.4 Ω Qg 22 nC APPLICATIONS z High efficiency switch mode power supplies z Electronic lamp ballasts based on half bridge z UPS 产品特性 z低栅极电荷 z低 Crss (典型值 22pF) z开关速度快 z产品全部经过雪崩测试 z高抗 dv/dt 能力 zRoHS 产品 Features zLow gate charge zLow Crss (typical 22pF ) zFast switching z100% avalanche tested zImproved dv/dt capability zRoHS product 订货信息 ORDER MESSAGE 订货型号 印记 Order codes Marking JCS630VA-O-V-N-B JCS630VA JCS630RA-O-R-N-B JCS630RA JCS630RA-O-R-N-A JCS630RA JCS630SA-O-S-N-B JCS630SA JCS630BA-O-B-N-B JCS630BA JCS630CA-O-C-N-B JCS630CA JCS630FA-O-F-N-B JCS630FA 封装 Packa...