12N65
650V N-Channel Power MOSFET
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
TO-220/ITO-220
TO-262/TO-263
TO-220
ITO-220
SYMBOL
θJA
θJC
RATING
62.5
0.56
2.6
UNIT
C /W
C /W
ELECTRICAL CHARACTERISTICS
(TC=25 C , unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Forward
Gate- Source Leakage Current
Reverse
SYMBOL TEST CONDITIONS
BVDSS
IDSS
IGSS
VGS=0V,ID=250μA
VDS=650V,VGS=0V
VG=30V,VDS=0V
VGS=-30V,VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
VGS(TH)
RDS(ON)
VDS=VGS,ID=250μA
VGS=10V,ID=6.0A
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
CISS
COSS
VDS=25V,VGS=0V,f=1MHz
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
tD(ON)
tR
tD(OFF)
VDD=300V,ID=12A,
RG=25Ω(Note1,2)
Turn-Off Fall Time
tF
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
QG VDS=480V,ID=12A,
QGS VGS=10V(Note1,2)
QGD
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
VSD VGS=0V,IS=12A
Maximum Continuous Drain-Source Diode
Forward Current
IS
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
Reverse Recovery Time
trr
Reverse Recovery Charge
QRR
Notes: 1. Pulse Test: Pulse width ≤300μS,Duty cycle≤2%.
VGS=0V,IS=12A
dIF/dt=100A/μs(Note 1)
2. Essentially independent of operating temperature.
MIN TYP MAX UNIT
650 V
1 μA
100 nA
-100 nA
2.0 4.0 V
0.65 0.85 Ω
1480
200
25
pF
pF
pF
30 ns
115 ns
95 ns
85 ns
42 nC
8.6 nC
21 nC
1.4 V
12 A
48
570
5.5
A
ns
μC
JINAN JINGHENG ELECTRONICS CO., LTD.
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