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JINAN JINGHENG

12N65 Datasheet Preview

12N65 Datasheet

650V N Channel Power MOSFET

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R
SEMICONDUCTOR
FEATURES
RDS(ON)<0.85Ω@VGS=10V
Fast switching capability
Low gate charge
Lead free in compliance with EU RoHS directive.
MECHANICAL DATA
Case:TO-220,ITO-220,TO-262,TO-263 Package
12N65
650V N-Channel Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
650 0.85 @ VGS=10V
TO-220AB
12N65
ITO-220AB
12N65F
ID (A)
12
Ordering Information
Part No.
12N65-TU
12N65F-TU
12N65E-TU
12N65D-TU
12N65D-TR
Package
TO-220
ITO-220
TO-262
TO-263
TO-263
Packing
50pcs / Tube
50pcs / Tube
50pcs / Tube
50pcs / Tube
800pcs / 13"Reel
1 23
TO-262
12N65E
1 23
TO-263
12N65D
Pin Definition:
1. Gate
2. Drain
3. Source
23
1
Block Diagram
D
G
ABSOLUTE MAXIMUM RATINGS
(TC=25 C , unless otherwise specified)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 2)
Avalanche Energy Single Pulsed(Note 3)
SYMBOL
VDSS
VGSS
ID
IDM
EAS
RATINGS
650
±30
12
48
790
UNIT
V
V
A
A
mJ
S
Power Dissipation
TO-220/TO-263/TO-262
ITO-220
PD
225
W
51
Junction Temperature
TJ
+150
C
Storage Temperature
TSTG
-55 ~ +150
C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L=30mH, IAS=6.4A,VDD=50V,RG=25Ω,Starting TJ=25 C
JINAN JINGHENG ELECTRONICS CO., LTD. 8-1 HTTP://WWW.JINGHENG.CN




JINAN JINGHENG

12N65 Datasheet Preview

12N65 Datasheet

650V N Channel Power MOSFET

No Preview Available !

12N65
650V N-Channel Power MOSFET
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
TO-220/ITO-220
TO-262/TO-263
TO-220
ITO-220
SYMBOL
θJA
θJC
RATING
62.5
0.56
2.6
UNIT
C /W
C /W
ELECTRICAL CHARACTERISTICS
(TC=25 C , unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Forward
Gate- Source Leakage Current
Reverse
SYMBOL TEST CONDITIONS
BVDSS
IDSS
IGSS
VGS=0V,ID=250μA
VDS=650V,VGS=0V
VG=30V,VDS=0V
VGS=-30V,VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
VGS(TH)
RDS(ON)
VDS=VGS,ID=250μA
VGS=10V,ID=6.0A
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
CISS
COSS
VDS=25V,VGS=0V,f=1MHz
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
tD(ON)
tR
tD(OFF)
VDD=300V,ID=12A,
RG=25Ω(Note1,2)
Turn-Off Fall Time
tF
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
QG VDS=480V,ID=12A,
QGS VGS=10V(Note1,2)
QGD
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
VSD VGS=0V,IS=12A
Maximum Continuous Drain-Source Diode
Forward Current
IS
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
Reverse Recovery Time
trr
Reverse Recovery Charge
QRR
Notes: 1. Pulse Test: Pulse width ≤300μS,Duty cycle≤2%.
VGS=0V,IS=12A
dIF/dt=100A/μs(Note 1)
2. Essentially independent of operating temperature.
MIN TYP MAX UNIT
650 V
1 μA
100 nA
-100 nA
2.0 4.0 V
0.65 0.85 Ω
1480
200
25
pF
pF
pF
30 ns
115 ns
95 ns
85 ns
42 nC
8.6 nC
21 nC
1.4 V
12 A
48
570
5.5
A
ns
μC
JINAN JINGHENG ELECTRONICS CO., LTD.
8-2 HTTP://WWW.JINGHENG.CN


Part Number 12N65
Description 650V N Channel Power MOSFET
Maker JINAN JINGHENG
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12N65 Datasheet PDF






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