Datasheet Summary
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23-3L Plastic-Encapsulate Transistors
SOT-23-3L
Features
Power dissipation
TRANSISTOR (NPN)
1. BASE 2. EMITTER 3. COLLECTOR
1. 02
0. 025 0. 95¡ À
2. 80¡ À 0. 05 1. 60¡ À0. 05
PCM:
W (Tamb=25℃)
1. 9
Collector current 0.2 A ICM: Collector-base voltage 400 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO...
