Datasheet Summary
SEMICONDUCTOR
TECHNICAL DATA
HIGH VOLTAGE APPLICATION.
Features
High Breakdown Voltage. Collector Power Dissipation : PC=350mW.
EPITAXIAL PLANAR NPN TRANSISTOR
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-BaseVoltage
VCBO
Collector-EmitterVoltage
VCEO
Emitter-Base Voltage
VEBO
Collector Current
IC 300
Collector Power Dissipation
- 350
Junction Temperature
Tj 150
Storage Temperature Range
Tstg -55 150
- : Package Mounted On 99.5% Alumina 10 8 0.6mm.
UNIT V V V mA mW
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage...
