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SEMICONDUCTOR
TECHNICAL DATA
HIGH VOLTAGE APPLICATION.
FEATURES High Breakdown Voltage. Collector Power Dissipation : PC=350mW.
MMBTA44
EPITAXIAL PLANAR NPN TRANSISTOR
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-BaseVoltage
VCBO
450
Collector-EmitterVoltage
VCEO
400
Emitter-Base Voltage
VEBO
6
Collector Current
IC 300
Collector Power Dissipation
PC * 350
Junction Temperature
Tj 150
Storage Temperature Range
Tstg -55 150
* : Package Mounted On 99.5% Alumina 10 8 0.6mm.