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SS8 550
TRANSISTOR(PNP)
FEATURES High Collector Current Complementary to SS8050
SOT–23
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
-40
VCEO Collector-Emitter Voltage
-25
VEBO Emitter-Base Voltage
-5
IC Collector Current
-1.5
PC Collector Power Dissipation
300
RΘJA Thermal Resistance From Junction To Ambient
417
Tj Junction Temperature Tstg Storage Temperature
150 -55～+150
Unit V V V A
mW ℃/W
℃ ℃
1. BASE 2. EMITTER 3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
V(BR)CBO IC=-100µA, IE=0
Collector-emitter breakdown voltage V(BR)CEO IC=-0.
SS8550 Datasheet
