VDSS=650V, ID=7A Drain-Source ON Resistance : RDS(ON)=1.4 @VGS=10V K M L J D N N P Qg(typ.)= 32nC www.DataSheet4U.com H MAXIMUM RATING (Tc=25 CHARACTERISTIC Drain-So.

KHB7D0N65P1/F1 N CHANNEL MOS FIELD EFFECT TRANSISTOR KHB7D0N65P1 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable f.

7D0N65F2

7D100A-050EHR

7D12U12-12

7D12U15-15

7D150A-050EHR

7D30A-050EHR

7D50A-050EHR

7D50A-050EJR

7D5N60F1

7D5U12-12

7D75A-050EHR

7DJ8