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SEMICONDUCTOR
TECHNICAL DATA
High Voltage Switching.
FEATURES Low Leakage Current. Repetitive Peak Reverse Voltage : VRRM 250V. Low Capacitance : CT 2pF.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Maximum (Peak) Reverse Voltage
Reverse Voltage
Maximum (Peak) Forward Current
Single diode loaded. Forward Current
Double diode loaded.
VRM VR IFM
IF
250 200 625 225 125
Surge Current (Square wave)
t=1 s t = 100 s t = 10ms
9
IFSM
3
1.7
Power Dissipation
PD 250*
Junction Temperature
Tj 150
Storage Temperature Range
Tstg -55 150
Note : * Device mounted on a FR4 Printed-Circuit Board (PCB)
UNIT V V mA
mA
A A A mW
BAV23S
SILICON EPITAXIAL PLANAR DIODE
E L BL
DIM MILLIMETERS A 2.93+_ 0.20
B 1.30+0.20/-0.15
A G H
D
23
C 1.30 MAX D 0.40+0.15/-0.05
E 2.40+0.30/-0.
BAV23S Datasheet
