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BAV23S Datasheet Preview

BAV23S Datasheet

SILICON EPITAXIAL PLANAR DIODE

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SEMICONDUCTOR
TECHNICAL DATA
High Voltage Switching.
FEATURES
Low Leakage Current.
Repetitive Peak Reverse Voltage : VRRM 250V.
Low Capacitance : CT 2pF.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Maximum (Peak) Reverse Voltage
Reverse Voltage
Maximum (Peak) Forward Current
Single diode loaded.
Forward Current
Double diode loaded.
VRM
VR
IFM
IF
250
200
625
225
125
Surge Current
(Square wave)
t=1 s
t = 100 s
t = 10ms
9
IFSM
3
1.7
Power Dissipation
PD 250*
Junction Temperature
Tj 150
Storage Temperature Range
Tstg -55 150
Note : * Device mounted on a FR4 Printed-Circuit Board (PCB)
UNIT
V
V
mA
mA
A
A
A
mW
BAV23S
SILICON EPITAXIAL PLANAR DIODE
E
L BL
DIM MILLIMETERS
A 2.93+_ 0.20
B 1.30+0.20/-0.15
23
C 1.30 MAX
D 0.40+0.15/-0.05
E 2.40+0.30/-0.20
1 G 1.90
H 0.95
J 0.13+0.10/-0.05
K 0.00 ~ 0.10
Q
PP
L 0.55
M 0.20 MIN
N 1.00+0.20/-0.10
P7
Q 0.1 MAX
M
1. CATHODE 1
2. ANODE 2
3. ANODE 1/ CATHODE 2
3
21
SOT-23
Marking
J CType Name
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Forward Voltage
VF
Reverse Current
Total Capacitance
Reverse Recovery Time
IR
CT
trr
TEST CONDITION
IF=100mA
IF=200mA
VR=200V
VR=200V, Tj=150
VR=0V, f=1MHz
IF=10mA, IR=10mA, IRM=1mA
MIN.
-
-
-
-
-
-
TYP.
-
-
-
-
-
-
MAX.
1.0
1.25
0.1
100
2
50
UNIT
V
A
pF
ns
2010. 11. 23
Revision No : 0
1/2




KEC

BAV23S Datasheet Preview

BAV23S Datasheet

SILICON EPITAXIAL PLANAR DIODE

No Preview Available !

BAV23S
2010. 11. 23
Revision No : 0
2/2


Part Number BAV23S
Description SILICON EPITAXIAL PLANAR DIODE
Maker KEC
PDF Download

BAV23S Datasheet PDF





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