BAV23S Overview
DISCRETE POWER AND SIGNAL TECHNOLOGIES BAV23S HIGH VOLTAGE GENERAL PURPOSE DIODE PD . .350 mW @ TA = 25 Deg C BV . .250 V (MIN) @ IR = 100 uA TRR.
| Part number | BAV23S |
|---|---|
| Datasheet | BAV23S_FairchildSemiconductor.pdf |
| File Size | 40.79 KB |
| Manufacturer | Fairchild (now onsemi) |
| Description | HIGH VOLTAGE GENERAL PURPOSE DIODE |
|
|
|
DISCRETE POWER AND SIGNAL TECHNOLOGIES BAV23S HIGH VOLTAGE GENERAL PURPOSE DIODE PD . .350 mW @ TA = 25 Deg C BV . .250 V (MIN) @ IR = 100 uA TRR.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
![]() |
BAV23S | Dual high-voltage switching diodes | NXP |
![]() |
BAV23S | HIGH CONDUCTANCE ULTRA FAST DIODE | UTC |
![]() |
BAV23S | Dual Switching Diode | Yangzhou Yangjie |