Datasheet Summary
DISCRETE POWER AND SIGNAL TECHNOLOGIES
HIGH VOLTAGE GENERAL PURPOSE DIODE
PD . . . .350 mW @ TA = 25 Deg C BV . . . .250 V (MIN) @ IR = 100 uA TRR . . . 50 nS @ IF=IR = 30 mA IRR = 3.0 mA...
| Manufacturer | Part Number | Description |
|---|---|---|
NXP Semiconductors |
BAV23S | Dual high-voltage switching diodes |
Unisonic Technologies |
BAV23S | HIGH CONDUCTANCE ULTRA FAST DIODE |
Yangjie Electronic |
BAV23S | Dual Switching Diode |
Nexperia |
BAV23S | Dual high-voltage switching diodes |
Kexin Semiconductor |
BAV23S | Switching Diodes |