The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES
Low Forward Voltage : VF=1.0V (Max.). Small Package : VSM.
2
KDS221V
SILICON EPITAXIAL PLANAR DIODE
E B
1
3
MAXIMUM RATING (Ta=25
CHARACTERISTIC Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (1 s) Power Dissipation Junction Temperature Storage Temperature Range
)
SYMBOL VRM VR IFM IO IFSM PD Tj Tstg RATING 20 20 200 * 100 * 300 * 100 150 -55 150 UNIT V V mA mA mA mW
C
P
P
DIM MILLIMETERS _ 0.05 A 1.2 + _ 0.05 B 0.8 + _ 0.05 C 0.5 + _ 0.05 0.3 + D _ 0.05 1.2 + E _ 0.05 G 0.8 + H 0.40 _ 0.05 J 0.12 + _ 0.05 K 0.2 + P 5
A
G
H
K
J
D
3
1. CATHODE 1 2. ANODE 2 3. ANODE 1 / CATHODE 2
2 1
VSM
Note : * Unit Rating.
KDS221V Datasheet
