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SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES
Small Package : ESM. Low Forward Voltage : VF=1.0V (Max.).
2 E
KDS221E
SILICON EPITAXIAL PLANAR DIODE
B D 3
DIM A B
C D E G H J
MILLIMETERS _ 0.10 1.60 + _ 0.10 0.85 + _ 0.10 0.70 +
0.27+0.10/-0.05 _ 0.10 1.60 + _ 0.10 1.00 + 0.50 _ 0.05 0.13 +
A
G
1
CHARACTERISTIC Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (1 s) Power Dissipation Junction Temperature Storage Temperature Range
SYMBOL VRM VR IFM IO IFSM PD Tj Tstg
RATING 20 20 200 * 100 * 300 * 100 150 -55 150
UNIT V V mA mA mA mW
1. CATHODE 1 2. ANODE 2 3. ANODE 1 / CATHODE 2
2 1 3
C
MAXIMUM RATING (Ta=25
)
H
J
ESM
Note : * Unit Rating. Total Rating=Unit Rating x 0.
KDS221E Datasheet
