KDS221E
KDS221E is SILICON EPITAXIAL PLANAR DIODE manufactured by KEC.
SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION. Features
Small Package : ESM. Low Forward Voltage : VF=1.0V (Max.).
2 E
SILICON EPITAXIAL PLANAR DIODE
B D 3
DIM A B
C D E G H J
MILLIMETERS _ 0.10 1.60 + _ 0.10 0.85 + _ 0.10 0.70 +
0.27+0.10/-0.05 _ 0.10 1.60 + _ 0.10 1.00 + 0.50 _ 0.05 0.13 +
CHARACTERISTIC Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (1 s) Power Dissipation Junction Temperature Storage Temperature Range
SYMBOL VRM VR IFM IO IFSM PD Tj Tstg
RATING 20 20 200
- 100
- 300
- 100 150 -55 150
UNIT V V m A m A m A m W
1. CATHODE 1 2. ANODE 2 3. ANODE 1 / CATHODE 2
2 1 3
MAXIMUM RATING (Ta=25
)
Note :
- Unit Rating. Total Rating=Unit Rating x 0.7
Marking
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC Forward Voltage Reverse Current
)
TEST CONDITION IF=10m A VR=15V MIN. TYP. MAX. 1.0 0.1 UNIT V A VF...
