KDS226
KDS226 is SILICON EPITAXIAL PLANAR DIODE manufactured by KEC.
FEATURES
Small Package : SOT-23. Low Forward Voltag : VF=0.9V(Typ.). Fast Reverse Recovery Time : trr=1.6ns(Typ.). Small Total Capacitance : CT=0.9p F(Typ.).
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Maximum (Peak) Reverse Voltage
Reverse Voltage
Maximum (Peak) Forward Current
Average Forward Current
Surge Current (10ms)
IFSM
Power Dissipation
Junction Temperature
Tj
Storage Temperature Range
Tstg
Note :
- Unit Rating. Total Rating=Unit Rating x 0.7
RATING 85 80
- 100
- 2- 150 150 -55 150
UNIT V V m A m A A m W
SILICON EPITAXIAL PLANAR DIODE
E L BL
DIM MILLIMETERS A 2.93+_ 0.20
B 1.30+0.20/-0.15
C 1.30 MAX D 0.40+0.15/-0.05
E 2.40+0.30/-0.20 1 G 1.90
H 0.95
J 0.13+0.10/-0.05
K 0.00 ~ 0.10 Q
L...
