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KDS226 - SILICON EPITAXIAL PLANAR DIODE

Features

  • Small Package : SOT-23. Low Forward Voltag : VF=0.9V(Typ. ). Fast Reverse Recovery Time : trr=1.6ns(Typ. ). Small Total Capacitance : CT=0.9pF(Typ. ).

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Datasheet preview – KDS226

Datasheet Details

Part number KDS226
Manufacturer KEC
File Size 517.78 KB
Description SILICON EPITAXIAL PLANAR DIODE
Datasheet download datasheet KDS226 Datasheet
Additional preview pages of the KDS226 datasheet.

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Full PDF Text Transcription

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SEMICONDUCTOR TECHNICAL DATA ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES Small Package : SOT-23. Low Forward Voltag : VF=0.9V(Typ.). Fast Reverse Recovery Time : trr=1.6ns(Typ.). Small Total Capacitance : CT=0.9pF(Typ.). MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Maximum (Peak) Reverse Voltage VRM Reverse Voltage VR Maximum (Peak) Forward Current IFM Average Forward Current IO Surge Current (10ms) IFSM Power Dissipation PD Junction Temperature Tj Storage Temperature Range Tstg Note : *Unit Rating. Total Rating=Unit Rating x 0.7 RATING 85 80 300 * 100 * 2* 150 150 -55 150 UNIT V V mA mA A mW KDS226 SILICON EPITAXIAL PLANAR DIODE E L BL DIM MILLIMETERS A 2.93+_ 0.20 B 1.30+0.20/-0.15 A G H D 23 C 1.30 MAX D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.
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