KDS221V
KDS221V is SILICON EPITAXIAL PLANAR DIODE manufactured by KEC.
SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION. Features
Low Forward Voltage : VF=1.0V (Max.). Small Package : VSM.
SILICON EPITAXIAL PLANAR DIODE
MAXIMUM RATING (Ta=25
CHARACTERISTIC Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (1 s) Power Dissipation Junction Temperature Storage Temperature Range
)
SYMBOL VRM VR IFM IO IFSM PD Tj Tstg RATING 20 20 200
- 100
- 300
- 100 150 -55 150 UNIT V V m A m A m A m W
DIM MILLIMETERS _ 0.05 A 1.2 + _ 0.05 B 0.8 + _ 0.05 C 0.5 + _ 0.05 0.3 + D _ 0.05 1.2 + E _ 0.05 G 0.8 + H 0.40 _ 0.05 J 0.12 + _ 0.05 K 0.2 + P 5
1. CATHODE 1 2. ANODE 2 3. ANODE 1 / CATHODE 2
2 1
Note :
- Unit Rating. Total Rating=Unit Rating x 0.7
Marking
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC Forward Voltage Reverse Current
)
TEST CONDITION IF=10m A VR=15V MIN. TYP. MAX. 1.0 0.1 UNIT V A VF IR
SYMBOL
2003. 10. 28 ..net
Revision No : 0
1/2
100 FORWARD CURRENT I F (m A)
D1
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