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KEC

KDV251M Datasheet Preview

KDV251M Datasheet

SILICON EPITAXIAL PLANAR DIODE

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SEMICONDUCTOR
TECHNICAL DATA
VCO FOR C/P, CB PLL
FEATURES
Low Series Resistance : 0.6 (Max.)
High Capacitance Ratio : 1.7(Min.) 2.2(Max.)
KDV251M/S
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage
Junction Temperature
VR
Tj
Storage Temperature Range
Tstg
RATING
12
150
-55 150
UNIT
V
CLASSIFICATION OF CAPACITANCE RATIO GRADE
GRADE
CAPACITANCE RATIO (C1.6V/C5V)
NONE
1.70 2.20
A 1.70 1.82
B 1.80 1.92
C 1.90 2.020
D 2.00 2.12
E 2.10 2.20
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage
Reverse Current
Capacitance
Capacitance
Capacitance Ratio
VR
IR
C1.6V
C5V
C1.6V/C5V
Series Resistance
rS
TEST CONDITION
IR=10 A
VR=9V
VR=1.6V, f=1MHz
VR=5V, f=1MHz
VR=1V, f=50MHz
2002. 6. 25
Revision No : 4
MIN.
12
-
23
11
1.7
-
TYP.
-
-
-
-
-
-
MAX.
-
200
38
19
2.2
0.6
UNIT
V
nA
pF
pF
1/2




KEC

KDV251M Datasheet Preview

KDV251M Datasheet

SILICON EPITAXIAL PLANAR DIODE

No Preview Available !

KDV251M/S
2002. 6. 25
Revision No : 4
2/2


Part Number KDV251M
Description SILICON EPITAXIAL PLANAR DIODE
Maker KEC
Total Page 2 Pages
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