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KEC

KDV258 Datasheet Preview

KDV258 Datasheet

VARIABLE CAPACITANCE DIODE

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SEMICONDUCTOR
TECHNICAL DATA
VCO FOR UHF/VHF BAND.
FEATURES
High Capacitance Ratio : C1V/C4V =2.0(Min.)
Low Series Resistance : rs=0.45 (Max.)
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage
Junction Temperature
VR
Tj
Storage Temperature Range
Tstg
RATING
15
150
-55 150
UNIT
V
KDV258
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
B
1
G
H
2
D
MM
1. ANODE
2. CATHODE
J
C
I
DIM MILLIMETERS
A 2.50 +_ 0.1
B 1.25+_ 0.05
C 0.90 +_0.05
D 0.30+0.06/-0.04
E 1.70 +_ 0.05
F MIN 0.17
G 0.126 +_ 0.03
H 0~0.1
I 1.0 MAX
J 0.15 +_0.05
K 0.4 +_0.05
L 2 +4/-2
M 4~6
USC
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage
Reverse Current
Capacitance
VR
IR
C1V
C4V
Capacitance Ratio
K
Series Resistance
rS
TEST CONDITION
IR=1 A
VR=10V
VR=1V, f=1MHz
VR=4V, f=1MHz
-
VR=1V, f=470MHz
MIN.
15
-
19.0
8.5
2.0
-
TYP.
-
-
-
-
-
-
MAX.
-
10
21.0
10.0
-
0.45
UNIT
V
nA
pF
Marking
Type Name
U6
Lot No.
2008. 9. 11
Revision No : 1
1/2




KEC

KDV258 Datasheet Preview

KDV258 Datasheet

VARIABLE CAPACITANCE DIODE

No Preview Available !

1K
Ta=25 C
IR - VR
100
KDV258
100
10
C - VR
f=1MHz
Ta=25 C
10
0 2 4 6 8 10 12 14 16
REVERSE VOLTAGE VR (V)
1
0 5 10 15 20
REVERSE VOLTAGE VR (V)
2008. 9. 11
Revision No : 1
2/2


Part Number KDV258
Description VARIABLE CAPACITANCE DIODE
Maker KEC
PDF Download

KDV258 Datasheet PDF






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