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KF16N50F - N-CHANNEL MOS FIELD EFFECT TRANSISTOR

Download the KF16N50F datasheet PDF (KF16N50P included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for n-channel mos field effect transistor.

Description

This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

It is mainly suitable for active power factor correction and switching mode power supplies.

Features

  • VDSS=500V, ID=16A Drain-Source ON Resistance : RDS(ON)(Max)=0.36 @VGS=10V Qg(typ. )= 40.8nC.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (KF16N50P-KEC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number KF16N50F
Manufacturer KEC
File Size 75.93 KB
Description N-CHANNEL MOS FIELD EFFECT TRANSISTOR
Datasheet download datasheet KF16N50F Datasheet

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Other Datasheets by KEC
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Full PDF Text Transcription

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SEMICONDUCTOR TECHNICAL DATA KF16N50P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. FEATURES VDSS=500V, ID=16A Drain-Source ON Resistance : RDS(ON)(Max)=0.36 @VGS=10V Qg(typ.)= 40.8nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC RATING SYMBOL KF16N50P KF16N50F Drain-Source Voltage VDSS 500 Gate-Source Voltage VGSS 30 @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) ID IDP EAS EAR dv/dt 16 16* 9.7 9.
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