900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






KEC

KF3N50DZ Datasheet Preview

KF3N50DZ Datasheet

N-CHANNEL MOS FIELD EFFECT TRANSISTOR

No Preview Available !

SEMICONDUCTOR
TECHNICAL DATA
KF3N50DZ/DS
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, fast reverse recovery time, low on resistance, low gate
charge and excellent avalanche characteristics. It is mainly suitable for
electronic ballast and switching mode power supplies.
FEATURES
VDSS= 500V, ID= 2.5A
Drain-Source ON Resistance : RDS(ON)=2.5
Qg(typ) = 7.50nC
(Max) @VGS = 10V
trr(typ) = 120ns (KF3N50DS)
trr(typ) = 300ns (KF3N50DZ)
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
SYMBOL
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGSS
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
ID
IDP
EAS
EAR
dv/dt
Drain Power
Dissipation
Tc=25
Derate above 25
PD
Maximum Junction Temperature
Storage Temperature Range
Thermal Characteristics
Tj
Tstg
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-
Ambient
RthJC
RthJA
RATING
500
30
2.5
1.5
7
110
4
10
40
0.32
150
-55 150
3.1
110
UNIT
V
V
A
mJ
mJ
V/ns
W
W/
/W
/W
A
CD
B
H
G
FF
J
E
K
L
N
M
DIM MILLIMETERS
A 6.60 +_ 0.20
B 6.10 +_0.20
C 5.34 +_ 0.30
D 0.70 +_0.20
E 2.70 +_ 0.15
F 2.30 +_0.10
G 0.96 MAX
H 0.90 MAX
J 1.80 +_0.20
K 2.30 +_0.10
L 0.50 +_ 0.10
M 0.50 +_0.10
N 0.70 MIN
O 0.1 MAX
123
O
1. GATE
2. DRAIN
3. SOURCE
DPAK (1)
PIN CONNECTION
(KF3N50DZ/DS)
D
G
S
2010. 11. 29
Revision No : 0
1/6




KEC

KF3N50DZ Datasheet Preview

KF3N50DZ Datasheet

N-CHANNEL MOS FIELD EFFECT TRANSISTOR

No Preview Available !

KF3N50DZ/DS
ELECTRICAL CHARACTERISTICS (Tc=25 )
CHARACTERISTIC
Static
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain Cut-off Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source ON Resistance
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay time
Turn-on Rise time
Turn-off Delay time
Turn-off Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode Ratings
SYMBOL
TEST CONDITION
BVDSS
ID=250 , VGS=0V
BVDSS/ Tj ID=250 , Referenced to 25
IDSS VDS=500V, VGS=0V,
Vth VDS=VGS, ID=250
IGSS VGS= 25V, VDS=0V
RDS(ON)
VGS=10V, ID=1.25A
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
VDS=400V, ID=3A
VGS=10V
(Note4,5)
VDD=250V
ID=3A
RG=25
(Note4,5)
VDS=25V, VGS=0V, f=1.0MHz
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
KF3N50DZ
KF3N50DS
KF3N50DZ
KF3N50DS
IS
VGS<Vth
ISP
VSD IS=2.5A, VGS=0V
trr
IS=3A, VGS=0V,
dIs/dt=100A/
Qrr
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L=22mH, IS=3A, VDD=50V, RG=25 , Starting Tj=25 .
Note 3) IS 3A, dI/dt 100A/ , VDD BVDSS, Starting Tj=25 .
Note 4) Pulse Test : Pulse width 300 , Duty Cycle 2%.
Note 5) Essentially independent of operating temperature.
Marking
MIN. TYP. MAX. UNIT
500 - - V
- 0.55 - V/
- - 10
2.5 - 4.5 V
- - 10
- 2.0 2.5
- 8.0 -
- 2.0 -
- 3.5 -
- 15 -
- 20 -
- 25 -
- 20 -
- 350 -
- 45 -
- 4.5 -
nC
ns
pF
- -3
A
- - 12
- - 1.4 V
- 300 -
- 120 -
ns
- 1.1 -
- 0.25 -
C
1
KF3N50
DZ 001
1
2
KF3N50
DS 001
2
1 PRODUCT NAME
2 LOT NO
2010. 11. 29
Revision No : 0
2/6



Part Number KF3N50DZ
Description N-CHANNEL MOS FIELD EFFECT TRANSISTOR
Maker KEC
Total Page 6 Pages
PDF Download

KF3N50DZ Datasheet PDF





Similar Datasheet

1 KF3N50DS N-Channel MOSFET
KEC
2 KF3N50DZ N-Channel MOSFET
KEC
3 KF3N50DZ N-CHANNEL MOS FIELD EFFECT TRANSISTOR
KEC





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy