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KF80N08P - N-CHANNEL MOS FIELD EFFECT TRANSISTOR

Description

It s mainly suitable for low voltage applications such as automotive, DC/DC converters and a load switch in battery powered applications

Features

  • VDSS= 75V, ID= 80A Drain-Source ON Resistance : RDS(ON)=10m (Max. ) @VGS = 10V.

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Datasheet Details

Part number KF80N08P
Manufacturer KEC
File Size 428.57 KB
Description N-CHANNEL MOS FIELD EFFECT TRANSISTOR
Datasheet download datasheet KF80N08P Datasheet

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Full PDF Text Transcription

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SEMICONDUCTOR TECHNICAL DATA KF80N08P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description It s mainly suitable for low voltage applications such as automotive, DC/DC converters and a load switch in battery powered applications FEATURES VDSS= 75V, ID= 80A Drain-Source ON Resistance : RDS(ON)=10m (Max.) @VGS = 10V MAXIMUM RATING (Tc=25 ) CHARACTERISTIC RATING SYMBOL KF80N08P KF80N08F Drain-Source Voltage VDSS 75 Gate-Source Voltage VGSS 20 @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) ID IDP EAS EAR dv/dt 80 56 76 39 320 224 1200 18 4.5 Drain Power Dissipation Tc=25 Derate above 25 PD 230 1.54 62.5 0.
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