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KF8N60F - N-CHANNEL MOS FIELD EFFECT TRANSISTOR

Download the KF8N60F datasheet PDF (KF8N60P included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for n-channel mos field effect transistor.

Description

This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

It is mainly suitable for active power factor correction and switching mode power supplies.

Features

  • VDSS=600V, ID=8A Drain-Source ON Resistance : RDS(ON)(Max)=1.05 @VGS=10V Qg(typ. )= 24nC.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (KF8N60P-KEC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number KF8N60F
Manufacturer KEC
File Size 75.94 KB
Description N-CHANNEL MOS FIELD EFFECT TRANSISTOR
Datasheet download datasheet KF8N60F Datasheet

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Full PDF Text Transcription

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SEMICONDUCTOR TECHNICAL DATA KF8N60P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. FEATURES VDSS=600V, ID=8A Drain-Source ON Resistance : RDS(ON)(Max)=1.05 @VGS=10V Qg(typ.)= 24nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC RATING SYMBOL KF8N60P KF8N60F Drain-Source Voltage VDSS 600 Gate-Source Voltage VGSS 30 @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) ID IDP EAS EAR dv/dt 8 8* 5 5* 20 20* 230 14.7 4.
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