KHB9D5N20F2 Datasheet (khb9d5n20f1/f2/p1) N Channel Mos Field Effect Transistor

Manufacturer: KEC

Overview: www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA KHB9D5N20P1/F1/F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Part number	KHB9D5N20F2
Manufacturer	KEC
File Size	526.19 KB
Description	(KHB9D5N20F1/F2/P1) N CHANNEL MOS FIELD EFFECT TRANSISTOR
Datasheet	KHB9D5N20F2 KHB9D5N20F1 Datasheet (PDF)

General Description

A KHB9D5N20P1 O C F E G B Q I K M L J D N N H P DIM MILLIMETERS _ 0.2 9.9 + A B C D E F G H I J K L M N O 1 2 3 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

It is mainly suitable for electronic ballast and switch mode power supplies.

Key Features

VDSS=200V, ID=9.5A Drain-Source ON Resistance : RDS(ON)=400m Qg(typ. )=18.5nC @VGS = 10V 15.95 MAX 1.3+0.1/-0.05 _ 0.1 0.8 + _ 0.2 3.6 + _ 0.1 2.8 + 3.7 0.5+0.1/-0.05 1.5 _ 0.3 13.08 + 1.46 _ 0.1 1.4 + _ 0.1 1.27 + _ 0.2 2.54 + _ 4.5 + 0.2 _ 0.2 2.4 + _ 0.2 9.2 + 1. GATE 2. DRAIN 3. SOURCE P Q TO-220AB.

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