trench mosfet.
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2 G 1
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VDSS=60V, ID=2A Drain-Source ON Resistance RDS(ON)=160m (Max.) @ VGS=10V RDS(ON)=220m (Max.) @ VGS=4.5V Super Hige Dense Cell Design
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DIM A B C D E G.
This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for portable equipment and SMPS.
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FEATURES
A H
2 G 1
3
VDSS=60.
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