VDSS=40V, ID=7A. Drain-Source ON Resistance. RDS(ON)=25m RDS(ON)=45m (Max.) @VGS=10V (Max.) @VGS=4.5V 1 8 5 B1 B2 4 A Super High Dense Cell Design High Power and Current.

This planer stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for portable equipment and SMPS. D P G H T L FEATURES VDSS=40V, ID=.

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