High emitter-base voltage : VEBO=25V(Min) High reverse hFE : reverse hFE=150(Typ. ) (VCE=-2V, IC=-4mA) Low on resistance : Ron=1 (Typ. ) (IB=5mA) With Built-in Bias Resistors. Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process. A J
KRC281U~KRC286U.
Full PDF Text Transcription for KRC281U (Reference)
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KRC281U. For precise diagrams, and layout, please refer to the original PDF.
SEMICONDUCTOR TECHNICAL DATA SWITCHING APPLICATION. AUDIO MUTING APPLICATION. FEATURES High emitter-base voltage : VEBO=25V(Min) High reverse hFE : reverse hFE=150(Typ.) ...
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base voltage : VEBO=25V(Min) High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) Low on resistance : Ron=1 (Typ.) (IB=5mA) With Built-in Bias Resistors. Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process. A J KRC281U~KRC286U EPITAXIAL PLANAR NPN TRANSISTOR www.DataSheet4U.com E M B M D 3 2 1 C EQUIVALENT CIRCUIT C B R1 H N K 1. EMITTER 2. BASE 3. COLLECTOR N DIM A B C D E G H J K L M N MILLIMETERS _ 0.20 2.00 + _ 0.15 1.25 + _ 0.10 0.90 + 0.3+0.10/-0.05 _ 0.20 2.10 + 0.65 0.15+0.1/-0.06 1.30 0.00~0.10 0.70 0.42 0.
KRC281U Datasheet
