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KTA1385L Datasheet Preview

KTA1385L Datasheet

EPITAXIAL PLANAR PNP TRANSISTOR

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SEMICONDUCTOR
TECHNICAL DATA
KTA1385D/L
EPITAXIAL PLANAR PNP TRANSISTOR
LOW COLLECTOR SATURATION VOLTAGE
LARGE CURRENT
FEATURES
High Power Dissipation : PC=1.3W(Ta=25
Complementary to KTC5103D/L
)
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse *
Base Current
VCBO
VCEO
VEBO
IC
ICP
IB
Collector Power
Dissipation
Ta=25
Tc=25
PC
Junction Temperature
Tj
Storage Temperature Range
Tstg
* PW 10ms, Duty Cycle 50%
RATING
-60
-60
-7
-5
-8
-1
1.0
15
150
-55 150
UNIT
V
V
V
A
A
W
A
C
H
FF
123
1. BASE
2. COLLECTOR
3. EMITTER
I
J
P
L
DIM
A
B
C
D
E
F
H
I
J
K
L
M
O
P
Q
MILLIMETERS
6.60 +_ 0.2
6.10 +_ 0.2
5.0 +_ 0.2
1.10+_ 0.2
2.70+_ 0.2
2.30+_ 0.1
1.00 MAX
2.30+_ 0.2
0.5+_ 0.1
2.00 +_ 0.20
0.50 +_ 0.10
0.91+_ 0.10
0.90+_ 0.1
1.00 +_ 0.10
0.95 MAX
DPAK
AI
CJ
H
G
FF
123
1. BASE
2. COLLECTOR
3. EMITTER
DIM MILLIMETERS
A 6.60+_ 0.2
B 6.10+_ 0.2
C 5.0 +_ 0.2
P
D 1.10+_ 0.2
E 9.50+_ 0.6
F 2.30+_ 0.1
G 0.76+_ 0.1
H 1.0 MAX
I 2.30+_ 0.2
J 0.5 +_ 0.1
L K 2.0 +_ 0.2
L 0.50+_ 0.1
P 1.0 +_0.1
Q 0.90 MAX
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
*
Collector-Emitter Saturation Voltage *
Base-Emitter Saturation Voltage *
ICBO
IEBO
hFE 1
hFE2 (Note)
hFE 3
VCE(sat)
VBE(sat)
TEST CONDITION
VCB=-50V, IE=0
VEB=-7V, IC=0
VCE=-1V, IC=-0.1A
VCE=-1V, IC=-2A
VCE=-2V, IC=-5A
IC=-2A, IB=-0.2A
IC=-2A, IB=-0.2A
Switching
Time
Turn On Time
Storage Time
ton
0
I B2
INPUT
IB1
tstg IB1
IB2
20ยตsec
Fall Time
tf
-IB1=IB2=0.2A
DUTY CYCLE <= 1%
* Pulse test : PW 350 S, Duty Cycle 2% Pulse
Note) hFE(2) Classification : O:160 320, Y:200 400.
OUTPUT
VCC =-10V
IPAK
MIN.
-
-
60
160
50
-
-
TYP.
-
-
-
-
-
-0.14
-0.9
- 0.15
MAX.
-10
-10
-
400
-
-0.3
-1.2
1
UNIT
A
A
V
V
- 0.78 2.5
S
- 0.18 1
2003. 3. 27
Revision No : 3
1/3




KEC

KTA1385L Datasheet Preview

KTA1385L Datasheet

EPITAXIAL PLANAR PNP TRANSISTOR

No Preview Available !

KTA1385D/L
25
20
15
10
5
0
0
Pc - Ta
Tc=25 C
Ta=25 C
50 100 150 200
AMBIENT TEMPERATURE Ta ( C)
250
160
140
120
100
80
60
40
20
0
0
d T - TC
DissipationS/LbimLiitmedited
25 50 75 100 125 150 175 200
CASE TEMPERATURE Tc ( C)
SAFE OPERATING AREA
-10
-5
-3
-1
IC (Pulse)MAX.*
IC MAX.
DSis/sb2ip0La0i1tmmi0oSimnt*eLSd2i*mmSit*ed
-0.5
-0.3
-0.1
-1
* SINGLE NONREPETIVE
PULSED Tc=25 C
CURVES MUST BE DERATED
LINERLY WITH INCREASE
IN TEMPERATURE
-3 -5 -10
-30 -50 -100
COLLECTOR-EMITTER VOLTAGE VCE (V)
REVERSE BIAS
SAFE OPERATING AREA
-10
-8
-6
-4
-2
0
-20 -40 -60 -80 -100
COLLECTOR-EMITTER VOLTAGE VCE (V)
I C - VCE
-10
-8 I B=-1I5B0=m-1A00mIAB=-80mAIB=-60mA
-6 IB=-40mA
I B =-30mA
-4 IB=-20mA
-2 IB=-10mA
IB =0mA
0 -0.4 -0.8 -1.2 -1.6 -2.0
COLLECTOR-EMITTER VOLTAGE VCE (V)
2003. 3. 27
Revision No : 3
hFE - IC
1k
500
300 VCE =-2V
100
50 VCE =-1V
30
10
5
3
1
-0.01 -0.03 -0.1
-0.3
-1
-3
COLLECTOR CURRENT I C (A)
-10
2/3


Part Number KTA1385L
Description EPITAXIAL PLANAR PNP TRANSISTOR
Maker KEC
Total Page 3 Pages
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