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KTA1571S Datasheet Preview

KTA1571S Datasheet

EPITAXIAL PLANAR PNP TRANSISTOR

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SEMICONDUCTOR
TECHNICAL DATA
FEATURE
Low Collector-Emitter Saturation Voltage VCE(sat).
High Collector Current Capability : IC and ICP.
Higher Efficiency Leading to Less Heat Generation.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse *
Base Current
Collector Power Dissipation**
Junction Temperature
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
-120
-100
-5
-1
-3
-300
350
150
Storage Temperature Range
Tstg -55 150
* Pulse Width = 300 S, Duty Cycle 2%.
** Package Mounted on 99.5% Alumina 10 8 0.6mm.
MARKING
UNIT
V
V
V
A
mA
mW
Lot No.
KMAType Name
KTA1571Swww.DataSheet4U.com
EPITAXIAL PLANAR PNP TRANSISTOR
E
L BL
23
1
PP
M
1. EMITTER
2. BASE
3. COLLECTOR
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
MILLIMETERS
2.93+_ 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
SOT-23
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage **
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Cut-Off Current
Collector-Emitter Saturation Voltage **
Base-Emitter Saturation Voltage **
Base-Emitter Voltag
DC Current Gain **
Transition Frequency
Collector Output Capacitance
** Pulse Width = 300 S, Duty Cycle 2%.
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
ICES
VCE(sat) (1)
VCE(sat) (2)
VCE(sat) (3)
VBE(sat)
VBE
hFE(1)
hFE(2)
hFE(3)
hFE(4)
fT
Cob
TEST CONDITION
IC=-100 A
IC=-1mA
IE=-100 A
VCB=-80V, IE=0A
VEB=-4V, IC=0A
VCES=-80V, VBE=0V
IC=-250mA, IB=-25mA
IC=-500mA, IB=-50mA
IC=-1A, IB=-100mA
IC=-1A, IB=-100mA
VCE=-5V, IC=-1A
VCE=-5V, IC=-1mA
VCE=-5V, IC=-250mA
VCE=-5V, IC=-500mA
VCE=-5V, IC=-1A
VCE=-10V, IC=-50mA, f=100MHz
VCB=-10V, f=1MHz
2010. 2. 24
Revision No :3
MIN.
-120
-100
-5
-
-
-
-
-
-
-
-
150
150
150
125
100
-
TYP.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
17
MAX.
-
-
-
-100
-100
-100
-0.12
-0.18
-0.32
-1.1
-1.0
-
-
450
-
-
-
UNIT
V
V
V
nA
nA
nA
V
V
V
MHz
pF
1/3




KEC

KTA1571S Datasheet Preview

KTA1571S Datasheet

EPITAXIAL PLANAR PNP TRANSISTOR

No Preview Available !

KTA1571S
www.DataSheet4U.com
-1
IC/IB=10
VCE(sat) - I C
-10-1
Ta=100 C
-10-2
-10-1
Ta=25 C
Ta=-55 C
-1 -10 -102 -103 -104
COLLECTOR CURRENT IC (mA)
-10
IC/IB=10
VBE(sat) - IC
-1 Ta=-55 C
Ta=100 C
Ta=25 C
-10-1
-10-1
-1
-10 -102 -103 -104
COLLECTOR CURRENT I C (mA)
-10
IC/IB=20
Ta=25 C
VBE(sat) - I C
-1
-10-1
-10-1
-1 -10 -102 -103 -104
COLLECTOR CURRENT I C (mA)
2010. 2. 24
Revision No : 3
-1
Ta=25 C
VCE(sat) - I C
-10-1
IC/IB=50
IC/IB=20
-10-2
-10-1
-1
-10 -102 -103 -104
COLLECTOR CURRENT IC (mA)
h FE - I C
600 VCE=-10V
Ta=100 C
400
Ta=25 C
200
Ta=-55 C
0
-10-1
-1 -10 -102 -103 -104
COLLECTOR CURRENT I C (mA)
I C - VCE
-2
Ta=25 C
IB=40.5mA
IB=36mA
-1.6 IB=31.5mA
IB=27mA
-1.2
IB=45mA
IB=9mA
-0.8
IB=13.5mA
-0.4 IB=18mA
IB=22.5mA
IB=4.5mA
0
0 -1 -2 -3 -4 -5
COLLECTOR-EMITTER VOLTAGE VCE (V)
2/3


Part Number KTA1571S
Description EPITAXIAL PLANAR PNP TRANSISTOR
Maker KEC
Total Page 3 Pages
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