Click to expand full text
SEMICONDUCTOR
TECHNICAL DATA
FEATURE
Low Collector-Emitter Saturation Voltage VCE(sat). High Collector Current Capability : IC and ICP. Higher Efficiency Leading to Less Heat Generation.
B
KTA1572
www.DataSheet4U.com
EPITAXIAL PLANAR PNP TRANSISTOR
D DIM A B C D E F G H J K L M H N O P Q R S MILLIMETERS 7.20 MAX 5.20 MAX 0.60 MAX 2.50 MAX 1.15 MAX 1.27 1.70 MAX 0.55 MAX _ 0.50 14.00 + 0.35 MIN _ 0.10 0.75 + 4
MAXIMUM RATING (Ta=25
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range DC Pulse
)
SYMBOL VCBO VCEO VEBO IC ICP IB PC Tj Tstg RATING -120 -100 -5 -1 -3 -300 1 150 -55 150 UNIT V V V A
O F H M C Q
P DEPTH:0.
KTA1572 Datasheet
