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SEMICONDUCTOR
TECHNICAL DATA
FEATURE
Low Collector-Emitter Saturation Voltage VCE(sat). High Collector Current Capability : IC and ICP. Higher Efficiency Leading to Less Heat Generation.
L
KTA1571S
www.DataSheet4U.com
EPITAXIAL PLANAR PNP TRANSISTOR
E B
L
A
G
MAXIMUM RATING (Ta=25
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation** Junction Temperature Storage Temperature Range DC Pulse *
)
SYMBOL VCBO VCEO VEBO IC ICP IB PC Tj Tstg RATING -120 -100 -5 -1 -3 -300 350 150 -55 150 0.6mm. UNIT V V V
2
3
1
P
P
DIM A B C D E G H J K L M N P
MILLIMETERS _ 0.20 2.93 + 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.
KTA1571S Datasheet
