100N03 Datasheet, KIA

n RDS(on)=3.1mΩ@ VGS=10V n Improved dv/dt capability n Fast switching n Green device available 3.Symbol Pin Function 1 Gate 2 Drain 3 Source 1 of 5 Rev 1.0 OCT 2014 K.

This Power MOSFET is produced using KIA`s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the av.