| Part Number | 100N03 Datasheet |
|---|---|
| Manufacturer | GFD |
| Overview |
The 100N03 uses advanced trench technology And design to provide excellent RDS (ON ) with Low gate charge . It can be used in a wide Vanety of applications .
100N03
VDS
30V
RDS(ON)
ID
3.5mΩ 100A
.
* VDS = 30 V, ID = 100 A RDS(ON) < 5.5 mΩ @ VGS = 10 V (Typ:4mΩ ) * High density cell design for ultra low Rdson * Fully characterized Avalanche voltage and current * Good stabilty and unifomity with high EAS * Excellent package for good heat dissipation * Special process technology for high ESD cap. |
100N03 Datasheet PDF
The 100N03 is a MOSFET.
| Part Number | 100N03 Datasheet |
|---|---|
| Description | N-CHANNEL MOSFET |
| Manufacturer | KIA |
| Overview | This Power MOSFET is produced using KIA`s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching perf. n RDS(on)=3.1mΩ@ VGS=10V n Improved dv/dt capability n Fast switching n Green device available 3.Symbol Pin Function 1 Gate 2 Drain 3 Source 1 of 5 Rev 1.0 OCT 2014 KIA 90A，30V N-CHANNEL MOSFET SEMICONDUCTORS S 4. Absolute maximum ratings Parameter Drain-source voltage Gate-source voltage C. |