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100N03 Datasheet MOSFET

Manufacturer: GFD

Overview: DESCRIPTION The 100N03 uses advanced trench technology And design to provide excellent RDS (ON ) with Low gate charge . It can be used in a wide Vanety of applications . 100N03 VDS 30V RDS(ON) ID 3.

Datasheet Details

Part number 100N03
Manufacturer GFD
File Size 629.68 KB
Description MOSFET
Datasheet 100N03-GFD.pdf

General Description

The 100N03 uses advanced trench technology And design to provide excellent RDS (ON ) with Low gate charge .

It can be used in a wide Vanety of applications .

100N03 VDS 30V RDS(ON) ID 3.5mΩ 100A GENERAL

Key Features

  • VDS = 30 V, ID = 100 A RDS(ON) < 5.5 mΩ @ VGS = 10 V (Typ:4mΩ ).
  • High density cell design for ultra low Rdson.
  • Fully characterized Avalanche voltage and current.
  • Good stabilty and unifomity with high EAS.
  • Excellent package for good heat dissipation.
  • Special process technology for high ESD capability.

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Part Number Description

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