• Part: 100N03
  • Description: MOSFET
  • Manufacturer: GFD
  • Size: 629.68 KB
Download 100N03 Datasheet PDF
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Datasheet Summary

DESCRIPTION The 100N03 uses advanced trench technology And design to provide excellent RDS (ON ) with Low gate charge . It can be used in a wide Vanety of applications . 30V RDS(ON) 3.5mΩ 100A GENERAL Features - VDS = 30 V, ID = 100 A RDS(ON) < 5.5 mΩ @ VGS = 10 V (Typ:4mΩ ) - High density cell design for ultra low Rdson - Fully characterized Avalanche voltage and current - Good stabilty and unifomity with high EAS - Excellent package for good heat dissipation - Special process technology for high ESD capability Application - Power switching application - Hard Switched and High Frequency Circuits - Uninterruptible Power Supply Ordering Information PART NUMBER PACKAGE...