28N50H Description
28N50H This Power MOSFET is produced using KIA advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge...
28N50H Key Features
- RDS(on)=0.17Ω @ VGS=10V
- Low gate charge ( typical 102nC)
- Fast switching capability
- Avalanche energy specified
- Improved dv/dt capability