28N50F
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
Key Features
- RDS(on) = 0.140Ω ( Typ.)@ VGS = 10V, ID = 14A
- Low Gate Charge ( Typ. 80nC)
- Low Crss ( Typ. 38pF)
- Fast Switching
- 100% Avalanche Tested
- Improved dv/dt Capability
