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28N50F - FDA28N50F

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Key Features

  • RDS(on) = 0.140Ω ( Typ. )@ VGS = 10V, ID = 14A.
  • Low Gate Charge ( Typ. 80nC).
  • Low Crss ( Typ. 38pF).
  • Fast Switching.
  • 100% Avalanche Tested.
  • Improved dv/dt Capability.
  • RoHS Compliant UniFET TM.

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Other Datasheets by Fairchild (now onsemi)

Part Number Description
28N15 FQA28N15

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDA28N50F N-Channel MOSFET January 2012 FDA28N50F N-Channel MOSFET 500V, 28A, 0.175Ω Features • RDS(on) = 0.140Ω ( Typ.)@ VGS = 10V, ID = 14A • Low Gate Charge ( Typ. 80nC) • Low Crss ( Typ. 38pF) • Fast Switching • 100% Avalanche Tested • Improved dv/dt Capability • RoHS Compliant UniFET TM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These device are well suited for high efficient switched mode power supplies and active power factor correction.