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28N50F - FDA28N50F

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

  • RDS(on) = 0.140Ω ( Typ. )@ VGS = 10V, ID = 14A.
  • Low Gate Charge ( Typ. 80nC).
  • Low Crss ( Typ. 38pF).
  • Fast Switching.
  • 100% Avalanche Tested.
  • Improved dv/dt Capability.
  • RoHS Compliant UniFET TM.

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Datasheet preview – 28N50F

Datasheet Details

Part number 28N50F
Manufacturer Fairchild Semiconductor
File Size 373.05 KB
Description FDA28N50F
Datasheet download datasheet 28N50F Datasheet
Additional preview pages of the 28N50F datasheet.

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Full PDF Text Transcription

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FDA28N50F N-Channel MOSFET January 2012 FDA28N50F N-Channel MOSFET 500V, 28A, 0.175Ω Features • RDS(on) = 0.140Ω ( Typ.)@ VGS = 10V, ID = 14A • Low Gate Charge ( Typ. 80nC) • Low Crss ( Typ. 38pF) • Fast Switching • 100% Avalanche Tested • Improved dv/dt Capability • RoHS Compliant UniFET TM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These device are well suited for high efficient switched mode power supplies and active power factor correction.
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