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50N03 - N-CHANNEL MOSFET

Features

  • Advanced trench process technology.
  • High density cell design for ultra low on-resistance.
  • Fully characterized avalanche voltage and current 2.

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Datasheet Details

Part number 50N03
Manufacturer KIA
File Size 6.83 MB
Description N-CHANNEL MOSFET
Datasheet download datasheet 50N03 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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KIA SEMICONDUCTORS 50 Amps, 30 Volts N-CHANNEL MOSFET 1.Features  Advanced trench process technology  High density cell design for ultra low on-resistance  Fully characterized avalanche voltage and current 2.Applications  VDSS=30V,RDS(on)=6.5mΩ,ID=50A  Vds=30V  RDS(ON)=6.5mΩ(Max.),VGS@10V,Ids@30A  RDS(ON)=9.5mΩ(Max.),VGS@4.5V,Ids@30A 3. Pin configuration 50N03 Pin Function 1 Gate 2 Drain 3 Source 4 Drain 1 of 3 Rev 1.0 JAN 2014 KIA SEMICONDUCTORS N-CHANNEL ENHANCEMENT-MODE MOSFET 50N03 4.
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