50N03 Datasheet - KIA

N-CHANNEL MOSFET

* Advanced trench process technology

* High density cell design for ultra low on-resistance

* Fully characterized avalanche voltage and current 2.Applications

* VDSS=30V,RDS(on)=6.5mΩ,ID=50A

* Vds=30V

* RDS(ON)=6.5mΩ(Max.),VGS@10V,Ids@30A

* RDS(ON)=9.5mΩ(Max.),VGS@4.5V,I

50N03

KIA

6.83 MB

N-channel mosfet.

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50N03 N-CHANNEL MOSFET KIA

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