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SMK0990CI - Advanced N-Ch Power MOSFET

Key Features

  • Drain-Source breakdown voltage: BVDSS=900V (Min. ).
  • Low gate charge: Qg=52nC (Typ. ).
  • Low drain-source On resistance: RDS(on)=1.4Ω (Max. ).
  • 100% avalanche tested.
  • RoHS compliant device Ordering Information Part Number SMK0990CI Marking SMK0990 Package TO-3P GDS TO-3P Marking Information Column 1: Manufacturer Column 2: Production Information e. g. ) GFYMDD -. G: Option Code (H: Halogen Free) -. F: Factory Management Code -. YMDD: Date Code (Year, Month, Date) Column 3: De.

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Datasheet Details

Part number SMK0990CI
Manufacturer KODENSHI KOREA
File Size 268.81 KB
Description Advanced N-Ch Power MOSFET
Datasheet download datasheet SMK0990CI Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SMK0990CI Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features  Drain-Source breakdown voltage: BVDSS=900V (Min.)  Low gate charge: Qg=52nC (Typ.)  Low drain-source On resistance: RDS(on)=1.4Ω (Max.)  100% avalanche tested  RoHS compliant device Ordering Information Part Number SMK0990CI Marking SMK0990 Package TO-3P GDS TO-3P Marking Information Column 1: Manufacturer Column 2: Production Information e.g.) GFYMDD -. G: Option Code (H: Halogen Free) -. F: Factory Management Code -.