Part number:
SNN0310Q
Manufacturer:
KODENSHI KOREA
File Size:
362.85 KB
Description:
Advanced n-ch trench mosfet.
SNN0310Q Datasheet (362.85 KB)
* Max. RDS(ON) = 150m at VGS = 10V, ID = 2A
* Low gate charge: Qg=18nC (Typ.)
* High performance trench technology for extremely low RDS(on)
* 100% avalanche tested
* Halogen free and RoHS compliant device Ordering Information Part Number Marking Package G D S SNN0310Q SN
SNN0310Q Datasheet (362.85 KB)
SNN0310Q
KODENSHI KOREA
362.85 KB
Advanced n-ch trench mosfet.
📁 Related Datasheet
SNN01Z10Q Logic level N-CH Power MOWFET (KODENSHI)
SNN01Z60Q Logic Level gat Drive Application (KODENSHI KOREA)
SNN0630Q Advanced N-Ch Trench MOSFET (KODENSHI KOREA)
SNN4010D N-Ch Trench MOSFET (KODENSHI KOREA)
SNN5010D Advanced N-Ch Power MOSFET (KODENSHI KOREA)
SN-A2970 CRYSTAL CLOCK OSCILLATORS (NEL)
SN-NE2121ADXBRGB-N RGB LED (ETC)
SN03A High Power Factor Flyback PWM Controller (On-Bright)
SN03AAP High Power Factor Flyback PWM Controller (On-Bright)
SN03ACP High Power Factor Flyback PWM Controller (On-Bright)
