• Part: SNN0310Q
  • Description: Advanced N-Ch Trench MOSFET
  • Manufacturer: Kodenshi AUK Group
  • Size: 362.85 KB
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SNN0310Q Key Features

  • Max. RDS(ON) = 150m at VGS = 10V, ID = 2A
  • Low gate charge: Qg=18nC (Typ.)
  • High performance trench technology for extremely low RDS(on)
  • 100% avalanche tested
  • Halogen free and RoHS pliant device
  • Y: Year Code
  • WW: Week Code

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