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SNN0630Q Datasheet - KODENSHI KOREA

Advanced N-Ch Trench MOSFET

SNN0630Q Features

* Low On-state resistance: 28m at VGS = 10V, ID = 2.9A

* Low gate charge: Qg= 4.5nC (Typ.)

* High performance trench technology for extremely low RDS(on)

* 100% avalanche tested

* Halogen free and RoHS compliant device Ordering Information Part Number Marking Package G D S

SNN0630Q Datasheet (384.30 KB)

Preview of SNN0630Q PDF

Datasheet Details

Part number:

SNN0630Q

Manufacturer:

KODENSHI KOREA

File Size:

384.30 KB

Description:

Advanced n-ch trench mosfet.

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TAGS

SNN0630Q Advanced N-Ch Trench MOSFET KODENSHI KOREA

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