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SNN4010D Datasheet - KODENSHI KOREA

N-Ch Trench MOSFET

SNN4010D Features

* Drain-source breakdown voltage: BVDSS=100V

* Low gate charge device

* Low drain-source On resistance: RDS(on)=25mΩ (Typ.)

* Advanced trench process technology

* High avalanche energy, 100% test Ordering Information Part Number Marking Package SNN4010D SNN4010 TO-252 D

SNN4010D Datasheet (308.62 KB)

Preview of SNN4010D PDF

Datasheet Details

Part number:

SNN4010D

Manufacturer:

KODENSHI KOREA

File Size:

308.62 KB

Description:

N-ch trench mosfet.

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TAGS

SNN4010D N-Ch Trench MOSFET KODENSHI KOREA

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