• Part: SNN4010D
  • Description: N-Ch Trench MOSFET
  • Manufacturer: Kodenshi AUK Group
  • Size: 308.62 KB
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SNN4010D Key Features

  • Drain-source breakdown voltage: BVDSS=100V
  • Low gate charge device
  • Low drain-source On resistance: RDS(on)=25mΩ (Typ.)
  • Advanced trench process technology
  • High avalanche energy, 100% test
  • YWW: Date Code (year, week)

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