logo

SNN4010D Datasheet, KODENSHI KOREA

SNN4010D mosfet equivalent, n-ch trench mosfet.

SNN4010D Avg. rating / M : 1.0 rating-15

datasheet Download

SNN4010D Datasheet

Features and benefits


* Drain-source breakdown voltage: BVDSS=100V
* Low gate charge device
* Low drain-source On resistance: RDS(on)=25mΩ (Typ.)
* Advanced trench process tech.

Image gallery

SNN4010D Page 1 SNN4010D Page 2 SNN4010D Page 3

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts