SMD Type
SCR Thyristor
03P2J/03P4J/03P5J
Thyristor
■ Features
● High Anode to Cathode Voltage
VDRM,VRRM=200V(03P2J)
VDRM,VRRM=400V(03P4J)
VDRM,VRRM=500V(03P5J)
1.70 0.1
0.42 0.1
0.46 0.1
1.Gate
2.Anode
3.Cathode
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Repetitive Peak Reverse Voltages @ IRRM=100uA
VRRM
Repetitive Peak Off-State Voltages @ IDRM=100uA
VDRM
Average on-state Current (Ta = 77℃Single phase half wave)
IT(AV)
Forward Current RMS
IT(RMS)
Non-Repetitive Peak on-state Current (f=50Hz,1cycle)
ITSM
Circuit Fusing Considerations (1ms≤ t ≤10ms)
I2t
Peak Gate Current ─ Forward (f≥50Hz,duty≤10℅)
IGFM
Peak Gate Voltage ─ Reverse
VGRM
Peak Gate Power ─ Forward (f≥50Hz,duty≤10℅)
PGM
Average Gate Power ─ Forward
Thermal Resistance Junction to Ambient
Junction Temperature
Storage Temperature Range
PGF(AV)
Rth(j-a)
TJ
Tstg
■ Electrical Characteristics (Ta = 25℃, unless otherwise noted.)
03P2J
200
200
03P4J
400
400
0.3
0.47
6
0.15
0.1
6
100
10
65
125
-55 to 150
03P5J
500
500
Unit
A
A2s
A
V
mW
℃/W
℃
Parameter
Gate Non-Trigger Voltage
Off-state Leakage Current
On-state Voltage
Gate Trigger Voltage
Gate Trigger Current (Continuous dc)
Holding Current
Symbol
Test Conditions
VGD VDM=1/2VDRM,TJ = 125℃
ID,IR
VDRM=VRRM,RGK=1KΩ,Tj=25℃;
VDRM=VRRM,Tj=125℃;
VTM IT=1A
VGT VDM=6V, RL=100Ω
IGT VDM=6V, RL=100Ω
IH VD=12V, IT=1A
Min Typ. Max Unit
0.1 V
10
uA
100
1.6
V
0.8
200 μA
5 mA
Critical Rate of rise of off-state Voltage
dV/dt VDM=2/3VDRM, Tj=125 ℃
40 V/us
Circuit Commutated turn-off time
■MhaFrEkiCnglassification
NO 03P2J
Marking
03P2J
03P4J
03P4J
tq
VD=2/3VDRM, Tj=125℃,TM=200mA;
VR≥25VdITM/dt=15A/us,dVD/dt=20V/us;
03P5J
03P5J
25 uS
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