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2SB1302 - PNP Epitaxial Planar Silicon Transistors

Features

  • Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Large current capacity. Fast switching speed. Very small size making it easy to provide highdensity, small-sized hybrid ICs. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Jumction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating -25 -20 -5 -5 -8 1.3 150 -55.

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SMD Type Transistors PNP Epitaxial Planar Silicon Transistors 2SB1302 Features Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Large current capacity. Fast switching speed. Very small size making it easy to provide highdensity, small-sized hybrid ICs. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Jumction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating -25 -20 -5 -5 -8 1.3 150 -55 to +150 Unit V V V A A W www.kexin.com.cn 1 Free Datasheet http://www.datasheet4u.
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