2SD1007 - NPN Silicon Epitaxial Transistor
2SD1007 Features
* High collector to emitter voltage: VCEO 120V. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse)
* Collector power dissipation Junction temperature Storage temperature
* . PW 10ms,duty c