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2SK3019 - N-Channel MOSFET

Key Features

  • s.
  • Low on-resistance.
  • Fast switching speed.
  • Low voltage drive (2.5V) makes this device ideal for portable equipment.
  • Easily designed drive circuits.
  • Easy to parallel. Gate Drain Gate Protection Diode Source MOSFET 1 Gate 2 Source 3 Drain.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current ID Continuous Drain Current Pulsed.
  • 1 IDP Power Dissipation.
  • 2 PD Junction.

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Full PDF Text Transcription (Reference)

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SMD Type N-Channel MOSFET 2SK3019 ■ Features ● Low on-resistance. ● Fast switching speed. ● Low voltage drive (2.5V) makes this device ideal for portable equipment. ● Easily designed drive circuits. ● Easy to parallel. Gate Drain Gate Protection Diode Source MOSFET 1 Gate 2 Source 3 Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current ID Continuous Drain Current Pulsed *1 IDP Power Dissipation *2 PD Junction Temperature Storage Temperature Range TJ Tstg *1 Pw≤10μs, Duty cycle≤1% *2 With each pin mounted on the recommended lands.