Datasheet4U Logo Datasheet4U.com

2SK3019 - N-Channel MOSFET

Features

  • s.
  • Low on-resistance.
  • Fast switching speed.
  • Low voltage drive (2.5V) makes this device ideal for portable equipment.
  • Easily designed drive circuits.
  • Easy to parallel. Gate Drain Gate Protection Diode Source MOSFET 1 Gate 2 Source 3 Drain.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current ID Continuous Drain Current Pulsed.
  • 1 IDP Power Dissipation.
  • 2 PD Junction.

📥 Download Datasheet

Datasheet Details

Part number 2SK3019
Manufacturer Kexin
File Size 837.67 KB
Description N-Channel MOSFET
Datasheet download datasheet 2SK3019 Datasheet

📁 Similar Datasheet

  • 2SK3019 - 2.5V Drive Nch MOS FET (Rohm)
  • 2SK3019 - N-Channel MOSFET (JCET)
  • 2SK3019 - Small Signal MOSFET Transistor (GME)
  • 2SK3019C3 - ESD protected N-Channel Enhancement Mode MOSFET (CYStech)
  • 2SK301 - N-Channel MOSFET (Panasonic Semiconductor)
  • 2SK3012 - VX-2 Series Power MOSFET (Shindengen Electric Mfg.Co.Ltd)
  • 2SK3013 - VX-2 Series Power MOSFET (Shindengen Electric Mfg.Co.Ltd)
  • 2SK3017 - Silicon N Channel MOS Type Field Effect Transistor (Toshiba Semiconductor)
  • 2SK3018 - 2.5V Drive Nch MOS FET (Rohm)
  • 2SK3018 - N-Channel MOSFET (JCET)
Other Datasheets by Kexin

Full PDF Text Transcription

Click to expand full text
SMD Type N-Channel MOSFET 2SK3019 ■ Features ● Low on-resistance. ● Fast switching speed. ● Low voltage drive (2.5V) makes this device ideal for portable equipment. ● Easily designed drive circuits. ● Easy to parallel. Gate Drain Gate Protection Diode Source MOSFET 1 Gate 2 Source 3 Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current ID Continuous Drain Current Pulsed *1 IDP Power Dissipation *2 PD Junction Temperature Storage Temperature Range TJ Tstg *1 Pw≤10μs, Duty cycle≤1% *2 With each pin mounted on the recommended lands.
Published: |