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2SK3019 Datasheet Preview

2SK3019 Datasheet

N-Channel MOSFET

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SMD Type
N-Channel MOSFET
2SK3019
Features
Low on-resistance.
Fast switching speed.
Low voltage drive (2.5V) makes this
device ideal for portable equipment.
Easily designed drive circuits.
Easy to parallel.
Gate
Drain
Gate
Protection
Diode
Source
MOSFET
1 Gate
2 Source
3 Drain
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
ID
Continuous Drain Current Pulsed *1
IDP
Power Dissipation
*2
PD
Junction Temperature
Storage Temperature Range
TJ
Tstg
*1 Pw10μs, Duty cycle1%
*2 With each pin mounted on the recommended lands.
Electrical Characteristics Ta = 25
Rating
30
±20
±100
±400
150
150
-55 to 150
Unit
V
mA
mW
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer admittance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Symbol
Test Conditions
Min Typ Max Unit
VDSS
ID=100μA, VGS=0V
30 V
IDSS
VDS=30V, VGS=0V
1 uA
IGSS
VDS=0V, VGS=±20V
±1 uA
VGS(th) VDS=VGS , ID=100μA
0.8 1.5 V
RDS(On)
VGS=4V, ID=10mA
VGS=2.5V, ID=1mA
58
Ω
7 13
| Yfs | VDS=3V, ID=10mA
20 mS
Ciss 13
Coss
VGS=0V, VDS=5V, f=1MHz
9 pF
Crss
4
td(on)
tr
td(off)
tf
VGS=5V, VDS=5V, RL=500Ω,RGEN=10Ω
ID=10mA
15
35
80
80
ns
Marking
Marking
KN
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Kexin

2SK3019 Datasheet Preview

2SK3019 Datasheet

N-Channel MOSFET

No Preview Available !

SMD Type
MOSFET
Typical Characterisitics
N-Channel MOSFET
2SK3019
0.15
4V
3V Ta=25°C
3.5V
Pulsed
0.1
2.5V
0.05
2V
VGS=1.5V
00 1 2 3 4 5
DRAIN-SOURCE VOLTAGE : VDS (V)
Fig.1 Typical output characteristics
200m VDS=3V
100m Pulsed
50m
20m
10m
5m
2m
1m
0.5m
0.2m
0.1m
0
Ta=125°C
75°C
25°C
25°C
123
GATE-SOURCE VOLTAGE : VGS (V)
4
Fig.2 Typical transfer characteristics
2 VDS=3V
ID=0.1mA
Pulsed
1.5
1
0.5
050 25 0 25 50 75 100 125 150
CHANNEL TEMPERATURE : Tch (°C)
Fig.3 Gate threshold voltage vs.
channel temperature
50
20 Ta=125°C
75°C
10
25°C
25°C
5
VGS=4V
Pulsed
50
Ta=125°C
20
75°C
25°C
25°C
10
5
VGS=2.5V
Pulsed
22
11
0.5
0.001 0.002
0.005 0.01 0.02 0.05 0.1 0.2
DRAIN CURRENT : ID (A)
0.5
0.5
0.001 0.002
0.005 0.01 0.02 0.05 0.1 0.2
DRAIN CURRENT : ID (A)
0.5
Fig.4 Static drain-source on-state
Fig.5 Static drain-source on-state
resistance vs. drain current (Ι)
resistance vs. drain current Ι(Ι)
15 Ta=25°C
Pulsed
10
5 ID=0.1A
ID=0.05A
00 5 10 15 20
GATE-SOURCE VOLTAGE : VGS (V)
Fig.6 Static drain-source
on-state resistance vs.
gate-source voltage
9 VGS=4V
8 Pulsed
7
ID=100mA
6
5 ID=50mA
4
3
2
1
050 25 0 25 50 75 100 125 150
CHANNEL TEMPERATURE : Tch (°C)
Fig.7 Static drain-source on-state
resistance vs. channel
temperature
0.5
0.2
Ta=25°C
0.1 25°C
0.05
75°C
125°C
0.02
0.01
0.005
VDS=3V
Pulsed
0.002
0.001
0.0001 0.0002 0.0005 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2
DRAIN CURRENT : ID (A)
0.5
Fig.8 Forward transfer
admittance vs. drain current
200m
100m
50m
VGS=0V
Pulsed
20m
Ta=125°C
10m 75°C
5m 25°C
25°C
2m
1m
0.5m
0.2m
0.1m
0 0.5 1 1.5
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.9 Reverse drain current vs.
source-drain voltage ( Ι)
2 www.kexin.com.cn


Part Number 2SK3019
Description N-Channel MOSFET
Maker Kexin
PDF Download

2SK3019 Datasheet PDF






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