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FDT86244 - N-Channel Enhancement MOSFET

Key Features

  • s.
  • VDS (V) = 150V.
  • ID = 2.8 A (VGS = 10V).
  • RDS(ON) ＜ 285mΩ (VGS = 10V).
  • RDS(ON) ＜ 305mΩ (VGS = 6V) D GDS SOT-223 6.50±0.2 3.00±0.1 4 10 Unit:mm 7.0±0.3 3.50±0.2 1.80 (max) 0.02 ~ 0.1 123 2.30 (typ) 4.60 (typ) 0.70±0.1 0.250 Gauge Plane 1.Gate 2.Drain 3.Source 4.Drain.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Ta=25℃ (Note.1) Power Dissipation Ta=25℃ (Note.1) Ta=25℃ (Note.2) Single Pu.

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SMD Type N-Channel Enhancement MOSFET FDT86244 MOSFET ■ Features ● VDS (V) = 150V ● ID = 2.8 A (VGS = 10V) ● RDS(ON) ＜ 285mΩ (VGS = 10V) ● RDS(ON) ＜ 305mΩ (VGS = 6V) D GDS SOT-223 6.50±0.2 3.00±0.1 4 10 Unit:mm 7.0±0.3 3.50±0.2 1.80 (max) 0.02 ~ 0.1 123 2.30 (typ) 4.60 (typ) 0.70±0.1 0.250 Gauge Plane 1.Gate 2.Drain 3.Source 4.Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Ta=25℃ (Note.1) Power Dissipation Ta=25℃ (Note.1) Ta=25℃ (Note.2) Single Pulsed Avalanche Energy (Note.3) Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Case Junction Temperature Storage Temperature Range Symbol VDS VGS ID PD EAS RthJA RthJC TJ Tst g Rating 150 ±20 2.8 12 2.2 1.